Media Alert: Atomera to Present at IEEE ISPSD 2022 Conference
May 19, 2022
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Both in-person and virtual presentation of Atomera’s poster, entitled
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www.ispsd2022.com (Virtual) |
This presentation will discuss using MST®-enabled (also referred to as “Oxygen-Inserted Silicon”) source engineering for gate-length scaling of low-voltage power switch devices. These results were demonstrated on silicon fabricated at an automotive-qualified foundry by shrinking the gate length of a baseline 5V analog MOSFET down to 0.25um, leading to a 100% increase in drive current compared to baseline devices. The result is the industry’s best RSP for both NMOS (< 0.8mOhm-mm2) and PMOS (1.8mOhm-mm2) switch devices, while maintaining all required device operations and reliability metrics. Atomera’s poster will highlight the benefits of MST integration in the channel for precise dopant diffusion control and electron mobility enhancements, and show how the team was able to successfully demonstrate the benefits of the MST-enabled channel source engineering for gate-length scaling of low-voltage power switch devices.
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Company website: https://atomera.com/
LinkedIn: www.linkedin.com/company/atomera/
About
View source version on businesswire.com: https://www.businesswire.com/news/home/20220519005399/en/
Media Contact:
The
(925) 719-1097
jgillespie@hoffman.com
Senior VP Marketing and Business Development,
(408) 442-5248
jlewis@atomera.com
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