Atomera Collaborates With the Center for Integrated Nanotechnologies (CINT) at Sandia National Laboratories to Validate MST’s Ability to Address GaN Manufacturing Challenges
October 8, 2024
CINT’s state-of-the-art facilities will enable
“Atomera’s MST represents a tremendous opportunity to improve GaN on Si manufacturing and provide speed, efficiency and cost-saving benefits to a wide range of industries including electronics, RF/microwave electronics and even MicroLEDs. This user project will test the effectiveness of the MST solution quickly using CINT’s highly specialized tools and technology and give
Due to the limited availability and size of native substrates, most GaN devices have been grown heteroepitaxially on sapphire, silicon carbide or Si substrates. Although impressive performance has been achieved with each of these, only Si substrates offer a clear pathway to large wafer size, low cost and compatibility with well-established CMOS wafer fabrication lines. However, there are significant challenges, including wafer warping or cracking, associated with the growth of thick GaN films on Si (GaN/Si), particularly at large wafer sizes.
“Over the past approximately 25 years, GaN has transformed multiple industries, including lighting, RF/microwave and power electronics, but manufacturing limitations have hindered the widespread adoption of GaN for modern power electronics,” said
Managing stress is the most important aspect of growing thick GaN epi on Si. Commercially available GaN on Si power electronics (PE) devices are currently limited to a ~650V rating due to the maximum epi thickness (and thus breakdown voltage) that can be grown on Si without excessive wafer curvature, micro-cracking or poor yield. MST can improve the growth of GaN epitaxy on Si substrates by relieving biaxial tensile stress.
To read more about MST and Atomera’s offerings, please visit www.atomera.com.
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